, the highest crystalline fraction of 84 obtained from A1 was not adequate
, the highest crystalline fraction of 84 obtained from A1 was not adequate and the LPC was not reached. Also, the grain size scarcely changed neither using the irradiance nor with the scan speed in the crystallized material making use of A1 as precursor, although the raw material presented an nc structure embedded into an amorphous matrix. This limitation observed within the crystallization situations applied on A1 was attributed for the low deposition temperature, getting a lot more weight than the reality of starting from a slight orderly structure. Such a outcome would be constant with the discovering that from raw material BTS 40542 supplier deposited at temperatures greater than RT led within a far more efficient way to the rearrangement of silicon atoms during the crystallization process, and hence, the LPC is usually accomplished extra very easily [12]. Additionally, it may be observed that the grain size increased sharply from 70 nm to 2.5 for the crystallized material from sample B2, reaching values of crystalline fraction larger than 95 . This was consistent with the greater irradiance values allowed in the crystallization process of this sample. In view in the results obtained, it can be concluded that the substrate temperature at which the raw material was deposited would have powerful influence around the subsequent crystallization parameters utilized, and hence, around the capability of reaching the LPC. Within this work, it has been demonstrated that higher XC of 95 and grain size of your order of microns can be accomplished from a completely amorphous raw material deposited at moderately higher deposition temperature of 325 C, which can be nonetheless below what is used in other studies [124]. 4. Conclusions a-Si films have been deposited by RF magnetron sputtering on glass substrates at various temperatures of RT and 325 C and operating gas pressures ranged from 0.7 to four.five Pa. Beneath these situations, high deposition prices (ten s) have been reached. This data is usually regarded as an necessary requirement for low-cost photovoltaic technology to fabricate cost-effective absorbers. The Raman spectra and XRD patterns recommended an nc structure embedded in an amorphous matrix when the precursor samples have been deposited at RT and somewhat low approach pressures up to 3.2 Pa. These samples showed a preliminary crystalline fraction around 20 , as well as the optical band gap and compactness obtained were closer to a crystalline material than to a purely amorphous one. Lastly, the AFM analysis revealed smoother surfaces when the precursor layers have been deposited at the substrate temperature to 325 C. On the other hand, the characterization in the crystallized samples showed an improvement in the grain size ( 2.5 ) along with the crystalline fraction (94 ) when starting from an a-Si precursor material deposited in the moderately higher temperature of 325 C. These outcomes suggest the relevance with the substrate deposition to reach the LPC within the crystallization approach, a essential piece to achieve a suitable crystallized material. Additionally, the laser processed samples presented far better functionality beneath high irradiances, regardless the sputtered conditions employed in the precursor fabrication. Despite the precursor samples depositedMaterials 2021, 14,9 ofat RT showed an initial nc structure, the values reached with the crystalline fraction and also the grain size had been extremely poor, and in any case, not superior to 84 and 71 nm, respectively. Ultimately, such an achievement reached employing a precursor material deposited at so moderately substrate temperature could result ve.
